# Molecular Beam Epitaxy Growth of Antiferromagnetic Kagome Metal FeSn

## TL;DR

This paper reports the first successful epitaxial growth of high-quality FeSn thin films, a room-temperature antiferromagnet with Dirac fermions, enabling potential spintronics applications.

## Contribution

It demonstrates the epitaxial growth of single crystalline FeSn films on SrTiO3 substrates, a significant step for device development.

## Key findings

- High-quality FeSn films with RRR of 24
- Antiferromagnetic ordering at 353 K
- Potential for spintronics applications

## Abstract

FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous report of epitaxial growth of single crystalline FeSn. Here we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO$_{3}$ (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio $\rho_{xx}(300 \hspace{0.2em}{\rm K})/\rho_{xx}(2 \hspace{0.2em}{\rm K}) = 24$ and antiferromagnetic ordering at $T_{\rm N}$ = 353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.