Josephson Junction Field-effect Transistors for Boolean Logic Cryogenic Applications
Feng Wen, Javad Shabani, Emanuel Tutuc

TL;DR
This paper explores Josephson junction FETs as potential low-power, cryogenic Boolean logic and memory elements, demonstrating their feasibility through modeling and circuit simulations, highlighting their advantages for cryogenic computing.
Contribution
It introduces a model and simulation framework for JJ-FET-based logic gates, showing their potential for cryogenic low-power digital applications.
Findings
JJ-FETs can be used for cryogenic Boolean logic and memory.
Circuit simulations indicate feasibility of signal restoration and fanout.
JJ-FETs are promising for low-power, clocked cryogenic logic.
Abstract
Josephson junction field effect transistors (JJ-FET) share design similarities with metal-oxide-semiconductor field effect transistors, except for the source/drain contacts being replaced by superconductors. Similarly, the super current due to proximity effect is tunable by the gate voltage. In this study, we examine the feasibility of JJ-FET-based Boolean logic and memory elements for cryogenic computing, in light of recent advances in novel materials and fabrication techniques. Using a two-dimensional ballistic transport JJ-FET model, we implement circuit level simulations for JJ-FET logic gates, and discuss criteria for realizing signal restoration, as well as fanout. We show that the JJ-FET is a promising candidate for very low power, clocked voltage-level dynamic logic at cryogenic temperatures.
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