Electrically driven optical interferometry with spins in silicon carbide

TL;DR

This paper demonstrates electrically driven quantum interference in the optical transition of single divacancies in silicon carbide, enabling coherent control of optical and spin states for quantum technologies.

Contribution

It introduces a method to coherently drive divacancy excited states electrically, revealing Landau-Zener-Stuckelberg interference and enhanced coherence properties.

Findings

Electric fields coherently drive divacancy excited states.

Observation of Landau-Zener-Stuckelberg interference fringes.

High coherence of optical and spin subsystems in silicon carbide.

Abstract

Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy's excited-state orbitals and induce Landau-Zener-Stuckelberg interference fringes in the resonant optical absorption spectrum. Additionally, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy's symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.