Thermal Stability Enhancement in Epitaxial {\alpha}-Sn Films by Strain Engineering
Huanhuan Song, Jinshan Yao, Yuanfeng Ding, Yu Gu, Yu Deng, Ming-Hui, Lu, Hong Lu, and Yan-Feng Chen

TL;DR
This study demonstrates that strain engineering via substrate choice and film thickness can significantly improve the thermal stability of epitaxial { extalpha}-Sn films, enabling potential room-temperature applications of this topological material.
Contribution
The paper reports the successful growth of high-quality { extalpha}-Sn films with enhanced thermal stability through strain engineering, supported by a plastic flow model explaining the stability dependence on thickness.
Findings
{ extalpha}-Sn films remain fully strained up to 4000 Å.
The { extalpha} phase persists up to 170°C for 200 Å films.
Thermal stability can be tuned by adjusting film thickness.
Abstract
Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be such a candidate and it can be tuned to be either a topological insulator or a Dirac semimetal by applying appropriate strain. However, free-standing {\alpha}-Sn is only stable below 13.2 {\deg}C. In this study, a series of high-quality {\alpha}-Sn films with different thicknesses have been successfully grown on InSb substrates by molecular beam epitaxy (MBE). Confirmed by both X-ray diffraction (XRD) and reciprocal space mapping (RSM), all the films remained fully strained up to 4000 {\AA}, proving the strain effect from the substrate. Remarkably, the single-crystalline {\alpha} phase can persist up to 170 {\deg}C for the 200 {\AA} thick sample. The…
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