Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and tensile strain

TL;DR

This study uses density functional theory to analyze how electronegative ligands and tensile strain influence the radiative rates in silicon nanocrystals, revealing ligand effects can enhance emission without changing bandgap.

Contribution

It demonstrates that electronegative ligands increase radiative rates in silicon nanocrystals independently of quantum confinement effects.

Findings

Electronegative ligands enhance radiative rates.

Tensile strain from ligands reduces radiative efficiency.

Homogeneous tensile strain from pressure differs from ligand-induced strain.

Abstract

It is widely accepted that the properties of most semiconductor nanocrystals can be tuned by their core size, shape and material. In covalent semiconductor nanocrystal materials, such as silicon, germanium or carbon, certain degree of tunability of the properties can be also achieved by the surface ligands. In particular, covalently bonded ligand species on the surface of such a nanocrystal (i) contribute to the density of states of the core via orbital delocalization; (ii) might introduce strain via ligand-to-ligand steric hindrance and (iii) will cause charge transfer from/to the core. In this work we study all these effects on silicon nanocrystals (SiNCs). We analyze geometrically optimized ~ 2 nm SiNCs with electronegative organic ligands using density functional theory (DFT) simulations. We show that the radiative rate is enhanced by electronegative alkyl and fluorocarbon with respect to what is expected from quantum confinement effect, while bandgap remains unchanged. Also, we show that tensile strain caused by the ligand steric hindrance is detrimental to the rate enhancement, contrary to the positive effects of the more homogeneous tensile strain induced in pressure cell.