Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers

TL;DR

This study investigates the unique resistance peak structures in odd-layer AB-stacked multilayer graphene, revealing how their electronic band structures differ from even-layer graphene through experiments and numerical calculations.

Contribution

It provides the first detailed experimental and theoretical analysis of resistance peaks in odd-layer AB-stacked multilayer graphene, highlighting the even-odd layer number effect.

Findings

Resistance peaks depend on layer parity and crystallographic structure.

Differences between odd and even layers originate from band structure variations.

Numerical models confirm the impact of layer number on electronic properties.

Abstract

The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers.The ridges are due to topological changes in the Fermi surface. Here, these structures were studied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7 layers) by performing experiments using encapsulated high-quality graphene samples equipped with top and bottom gate electrodes.The intrinsic resistance peaks that appeared on maps plotted with respect to the carrier density and perpendicular electric field showed particular patterns depending on graphene's crystallographic structure, and were qualitatively different from those of graphene with even numbers of layers. Numerical calculations of the dispersion relation and semi-classical resistivity using information based on the Landau level structure determined by the magnetoresistance oscillations, revealed that the difference stemmed from the even-odd layer number effect on the electronic band structure.