# Piezospintronic effect in antiperovskite Mn$_3$GaN

## TL;DR

This study uses first-principles calculations to explore topological transport in Mn$_3$GaN, revealing strain-tunable anomalous Hall effects and a significant piezospintronic response driven by spin-orbit coupling.

## Contribution

It uncovers the strain-induced piezospintronic effect and clarifies the origin of anomalous Hall conductivity in Mn$_3$GaN, advancing understanding of topological transport in antiperovskite materials.

## Key findings

- Large anomalous Hall conductivity depends on magnetization direction.
- Moderate epitaxial strain induces significant IAHC.
- Nonzero IAHC originates from spin-orbit coupling, not magnetic configuration.

## Abstract

Based on first-principles calculations, we investigated the topological transport properties of Mn$_3$GaN with coplanar noncollinear magnetic structures. The intrinsic anomalous Hall conductivity (IAHC) displays a significant dependence with respect to the in-plane magnetization direction between the $\Gamma_{5g}$ and $\Gamma_{4g}$ magnetic configurations, where large anomalous Nernst effect (ANE) can be induced by tailoring the magnetization direction. Moreover, we observed strong piezospintronic effect in Mn$_3$GaN, where large IAHC can be induced by moderate epitaxial strain. Symmetry analysis reveals that for both cases, the nonzero IAHC is originated from the spin-orbit coupling instead of the noncollinear magnetic configurations