# Transport Studies in a Gate-Tunable Three-Terminal Josephson Junction

## TL;DR

This paper investigates a top-gated three-terminal Josephson junction made from an InAs 2DEG with aluminum, exploring its transport properties and phase diagram to understand potential topological effects relevant for quantum computing.

## Contribution

It provides the first detailed experimental and theoretical analysis of a top-gated three-terminal Josephson device, highlighting its transport features and phase behavior.

## Key findings

- Good agreement between experimental phase diagram and RCSJ model
- Transport properties vary with bias, gate voltage, and magnetic field
- Potential for observing topological phenomena in multi-terminal Josephson devices

## Abstract

Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically-protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multi-terminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multi-terminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas (2DEG) proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage and magnetic field. We find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction (RCSJ) computational model.