# Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment

## TL;DR

This paper presents the first mesh experiment on a Pinned Depleted Diode (PDD) XRPIX sensor, demonstrating improved charge collection efficiency at pixel boundaries for X-ray astronomy, with insights into spectral response and resolution.

## Contribution

It introduces a mesh experiment to analyze the spectral response of PDD XRPIX sensors, revealing improvements in charge collection and identifying spectral line profile issues.

## Key findings

- PDD structure improves charge collection at pixel boundaries
- Spectral line profiles show low energy tails and peak shifts
- Enhanced understanding of subpixel spectral response

## Abstract

We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $\mu$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $\mu$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution.