# A comprehensive model of high-concentration phosphorus diffusion in silicon

## TL;DR

This paper presents a comprehensive model for high-concentration phosphorus diffusion in silicon, integrating stress-driven impurity drift and cluster formation, validated by simulation matching experimental profiles, relevant for solar cell manufacturing.

## Contribution

It introduces a novel combined model of impurity drift and clustering for phosphorus diffusion in silicon, validated through simulation.

## Key findings

- Simulation results agree well with experimental data.
- The model accurately predicts phosphorus concentration profiles.
- The approach enhances understanding of doping processes in solar cell fabrication.

## Abstract

A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min. has been carried out. Such doping processes are widely used in manufacturing modern solar cells. The proposed model combines the ideas of the drift of silicon self-interstitials in the field of elastic stresses with the concept of the formation of negatively charge clusters of impurity atoms. The calculated phosphorus concentration profile is in good agreement with the experimental one.