# Optoelectronic mixing with high frequency graphene transistors

## TL;DR

This paper demonstrates high-frequency optoelectronic mixing using graphene transistors, achieving up to 67GHz, and provides a model for the mixed current, advancing graphene-based mm-wave applications.

## Contribution

The study presents the first demonstration of optoelectronic mixing at 67GHz with graphene transistors and introduces a model for the mixed current in such devices.

## Key findings

- Optoelectronic mixing achieved up to 67GHz.
- Graphene transistors enable high-frequency optoelectronic applications.
- A model describing the mixed current in GFETs is proposed.

## Abstract

Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.