Error Probability in Magneto-elastic Switching of Non-ideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory
David Winters, Md Ahsanul Abeed, Sourav Sahoo, Anjan Barman and, Supriyo Bandyopadhyay

TL;DR
This study analyzes how fabrication defects and thermal noise affect the error probability of magneto-elastic switching in nanomagnets, revealing significant error increases that challenge their use in digital logic.
Contribution
It provides the first theoretical analysis of defect-induced error probabilities in magneto-elastic switches at room temperature, highlighting limitations for digital applications.
Findings
Defects significantly increase switching error probabilities.
A critical stress minimizes errors, but its value rises with defects.
Sinusoidal stress pulses are more reliable than constant ones.
Abstract
Magneto-elastic (straintronic) switching of bistable magnetostrictive nanomagnets is an extremely energy-efficient switching methodology for (magnetic) binary switches that has recently attracted widespread attention because of its potential application in ultra-low-power digital computing hardware. Unfortunately, this modality of switching is also error very prone at room temperature. Theoretical studies of switching error probability of magneto-elastic switches have predicted probabilities ranging from 10E-8-10E-3 at room temperature for ideal, defect-free nanomagnets, but experiments with real nanomagnets show a much higher probability that exceeds 0.1 in some cases. The obvious spoilers that can cause this large difference are defects and non-idealities. Here, we have theoretically studied the effect of common defects (that occur during fabrication) on magneto-elastic switching…
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