Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb

TL;DR

This study reveals how orbital-flop transitions in CeSb induce magnetoresistance anisotropy, highlighting the role of orbital behavior in magnetic phenomena and potential quantum device applications.

Contribution

It demonstrates the orbital-flop induced magnetoresistance anisotropy in CeSb and models its effects, advancing understanding of orbital contributions in magnetic materials.

Findings

Additional minima in magnetoresistance due to orbital-flops

Magnetization anisotropy explained by a phenomenological model

Orbital-flops can be utilized in spin-valve-like devices

Abstract

The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons - their orbital nature - is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance anisotropy in CeSb. In the low temperature high magnetic-field driven ferromagnetic state, a series of additional minima appear in the angle-dependent magnetoresistance. These minima arise from the anisotropic magnetization originating from orbital-flops and from the enhanced electron scattering from magnetic multidomains formed around the first-order orbital-flop transition. The measured magnetization anisotropy can be accounted for with a phenomenological model involving orbital-flops and a spin-valve-like structure is used to demonstrate the viable utilization of orbital-flop phenomenon. Our results showcase a contribution of orbital behavior in the emergence of intriguing phenomena.