Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface

TL;DR

This study combines experimental and theoretical approaches to measure and analyze the thermal boundary resistance at the SiC/SiO2 interface, providing insights crucial for thermal management in SiC-based devices.

Contribution

It offers new experimental measurements and theoretical predictions of TBR at the SiC/SiO2 interface, enhancing understanding of heat transfer in SiC devices.

Findings

Measured TBR as 8.11×10^-8 m^2K/W using 3-omega method

Diffuse mismatch model predictions agree with experimental data

Measured SiO2 thermal conductivity as 1.42 W/mK

Abstract

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO2 was characterized by using transmission electron microscopy and X-ray diffraction. The TBR is measured as 8.11*10-8 m2K/W by 3-omega method. Furthermore, the diffuse mismatch model was employed to predict the TBR of different interfaces which is in good agreement with measurements. Heat transport behavior based on phonon scattering perspective was also discussed to understand the variations of TBR across different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3 omega procedure, as 1.42 W/mK at room temperature. It is believed the presented results could provide useful insights on the thermal management and heat dissipation for SiC devices.