# Limits of III-V nanowire growth based on particle dynamics

## TL;DR

This paper investigates the stability of liquid droplets in III-V nanowire growth, revealing how interface truncation enhances growth stability and allows estimation of surface energies through combined experimental and theoretical analysis.

## Contribution

It introduces a novel approach combining in-situ microscopy and theory to determine growth limits and surface energies in nanowire fabrication.

## Key findings

- Interface truncation increases droplet stability.
- Growth parameter range is expanded by interface modifications.
- Surface energies like GaAs {11-20} facet are experimentally estimated.

## Abstract

Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with theoretical analysis of the surface energies involved, we show that truncation of the interface can increase the stability of the droplet, which in turn increases the range of parameters for which successful nanowire growth is possible. In addition to determining the limits of nanowire growth, this approach allows us to experimentally estimate relevant surface energies, such as the GaAs $\{11\bar{2}0\}$ facet.