Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films

TL;DR

This study reveals that electron-electron interactions significantly influence electronic transport in high-mobility La-doped SrSnO3 films, affecting Hall measurements and phase coherence, with implications for quantum device applications.

Contribution

The paper demonstrates the substantial role of electron-electron interactions in s-orbital conductors, challenging previous assumptions and providing detailed analysis of their impact on transport properties.

Findings

Electron-electron interactions cause increased Hall coefficient below 50 K.

Large phase coherence length exceeds 450 nm at 1.8 K.

EEI affects electron phase coherence and transport behavior.

Abstract

Contrary to the common belief that electron-electron interaction (EEI) should be negligible in s-orbital-based conductors, we demonstrated that the EEI effect could play a significant role on electronic transport leading to the misinterpretation of the Hall data. We show that the EEI effect is primarily responsible for an increase in the Hall coefficient in the La-doped SrSnO3 films below 50 K accompanied by an increase in the sheet resistance. The quantitative analysis of the magnetoresistance (MR) data yielded a large phase coherence length of electrons exceeding 450 nm at 1.8 K and revealed the electron-electron interaction being accountable for breaking of electron phase coherency in La-doped SrSnO3 films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications of stannates in quantum coherent electronic devices owing to their large phase coherence length.