# Towards magnetic control of magnetite

## TL;DR

This study investigates how substrate type, orientation, and film thickness influence the magnetic properties of high-quality magnetite films grown by IR-PLD, revealing controllable magnetic anisotropy and coercivity relevant for spintronics.

## Contribution

It demonstrates substrate-induced magnetic anisotropy and thickness-dependent coercivity control in epitaxial magnetite films, advancing their potential use in spintronic devices.

## Key findings

- Verwey transition close to bulk magnetite at 110-120 K
- In-plane fourfold magnetic symmetry on (001) surfaces
- Coercivity inversely proportional to film thickness

## Abstract

High quality stoichiometric magnetite (Fe3O4) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces were investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO3(001), MgAl2O4(001) and MgO(001), have been used for the preparation of epitaxial Fe3O4(001) films. By comparison, polycrystalline magnetite films were obtained on both single crystal Al2O3(0001) and amorphous Si/SiO2 substrates. The thickness has been varied between 50 - 400 nm. All films consist of nanocrystalline stoichiometric magnetite with very small strain (<1\%) and present the Verwey transition (Tv) between 110-120 K, i.e., close to bulk magnetite (122 K). In general, Tv depends on both microstructure and thickness, increasing mainly as the thickness increases. Room temperature angular-dependent measurements reveal an in-plane fourfold symmetry magnetic behavior for all films grown on (001)-oriented surfaces, and with the easy axes lying along the Fe3O4 [010] and [100] directions. Remarkably, the fourfold magnetic symmetry shows up to 400 nm thick films. In turn, the films grown on single crystal Al2O3 (0001) and on amorphous Si/SiO2 surfaces display an isotropic magnetic behavior. Coercive field (Hc) depends on microstructure and film thickness. The largest (lowest) Hc value corresponds to the thinner film grown on a single crystal SrTiO3(001) (amorphous Si/SiO2) surface, which present the largest (lowest) strain (crystallinity). Moreover, the coercivity follows an inverse law with film thickness. Our results demonstrate that we can artificially control the magnetic behavior of stoichiometric IR-PLD grown Fe3O4 films by exploiting substrate-induced anisotropy and thickness-controlled coercivity, that might be relevant to incorporate magnetite in future spintronic devices.