# Electrical and ELectronic Properties of Strained Mono-layer InTe

## TL;DR

This study investigates how biaxial strain affects the electrical and electronic properties of mono-layer InTe in two phases, using DFT calculations and analyzing its potential as a FET channel material.

## Contribution

It provides new insights into the strain-dependent electronic properties of mono-layer InTe and evaluates its performance in FET applications.

## Key findings

- Strain alters the band structure and effective masses of InTe.
- The I$_{ON}$/I$_{OFF}$ ratio varies with biaxial strain.
- Both $eta$ and $eta$ phases show potential for FET use.

## Abstract

In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, $\alpha$, and $\beta$ phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and I$_{ON}$/I$_{OFF}$ ratio is obtained with respect to biaxial strain.