Gate-tunable single-photon electroluminescence of color centers in silicon carbide

TL;DR

This paper proposes a gate-tunable silicon carbide-based single-photon source that can dynamically control and rapidly switch electroluminescence, advancing quantum information device development.

Contribution

It introduces a theoretical concept of a gate-tunable single-photon emitting diode in SiC, enabling dynamic control and fast switching of single-photon electroluminescence.

Findings

SPEL rate tunable from 0.6 to 40 Mcps

Switching time as fast as 0.2 ns

Potential for scalable quantum devices

Abstract

Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources. However, very little is known about how to control, dynamically tune and switch their single-photon electroluminescence (SPEL), which is required for efficient generation of single photons on demand. Here, we propose and theoretically demonstrate a concept of a gate-tunable single-photon emitting diode, which allows not only to dynamically tune the SPEL rate in the range from 0.6 to 40 Mcps but also to switch it on and off in only 0.2 ns.