# Waveguide-integrated, plasmonic enhanced graphene photodetectors

## TL;DR

This paper introduces a compact, on-chip graphene photodetector enhanced by plasmonics, achieving high responsivity and bandwidth for telecom applications, with innovative use of Au split-gates to improve light interaction.

## Contribution

The work demonstrates a novel plasmonic-enhanced graphene photodetector with integrated p-n junctions and high-speed performance, advancing on-chip photodetector technology for telecom.

## Key findings

- Responsivity of ~12.2 V/W
- Bandwidth of ~42 GHz
- Zero dark current operation

## Abstract

We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules