Giant Spin Seebeck Effect through an Interface Organic Semiconductor
V. Kalappattil, R. Geng, R. Das, H. Luong, M. Pham, T. Nguyen, A., Popescu, L.M. Woods, M. Kl\"aui, H. Srikanth, and M.H. Phan

TL;DR
This study demonstrates a giant spin Seebeck effect in a heterostructure involving organic semiconductor C60, significantly enhancing spin current transport and revealing the importance of magnetic anisotropy and spin diffusion length in such systems.
Contribution
The paper introduces a novel YIG/C60/Pt heterostructure that greatly enhances spin Seebeck voltage through interface engineering and provides insights into the roles of magnetic anisotropy and spin diffusion.
Findings
600% increase in SSE voltage with C60 layer
Exponential growth of SSE voltage at low temperatures
Reduced conductivity mismatch and enhanced spin mixing conductance
Abstract
Interfacing an organic semiconductor C60 with a non-magnetic metallic thin film (Cu or Pt) has created a novel heterostructure that is ferromagnetic at ambient temperature, while its interface with a magnetic metal (Fe or Co) can tune the anisotropic magnetic surface property of the material. Here, we demonstrate that sandwiching C60 in between a magnetic insulator (Y3Fe5O12: YIG) and a non-magnetic, strong spin-orbit metal (Pt) promotes highly efficient spin current transport via the thermally driven spin Seebeck effect (SSE). Experiments and first principles calculations consistently show that the presence of C60 reduces significantly the conductivity mismatch between YIG and Pt and the surface perpendicular magnetic anisotropy of YIG, giving rise to enhanced spin mixing conductance across YIG/C60/Pt interfaces. As a result, a 600% increase in the SSE voltage (VLSSE) has been realized…
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Taxonomy
TopicsQuantum and electron transport phenomena · Graphene research and applications · Molecular Junctions and Nanostructures
