# Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM

## TL;DR

This paper investigates how anti-notches influence domain-wall pinning in nanotracks and proposes a three-terminal MRAM device that utilizes this effect for fast, stable, and scalable memory storage.

## Contribution

It introduces a novel three-terminal MRAM design leveraging domain-wall pinning by anti-notches, demonstrating fast switching and high stability with minimal current pulses.

## Key findings

- Fast domain-wall motion with small current pulses
- Stable domain-wall pinning at anti-notches
- High magnetoresistive signal stability

## Abstract

In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allow us the proposition of a three-terminals device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between anti-notches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurement. Thus, our proposed device is a promising magnetoresistive random access memories with good scalability, duration, and high speed information storage.