# Superconducting boron doped nanocrystalline diamond on boron nitride ceramics

## TL;DR

This study demonstrates the successful growth of boron-doped nanocrystalline diamond on boron nitride ceramics, achieving superconductivity with a transition temperature near 3.4K, and highlights potential for applying similar methods to other ceramics.

## Contribution

It introduces a novel method for growing superconducting boron-doped nanocrystalline diamond on boron nitride ceramics using microwave CVD, with confirmed high-quality film and increased dielectric constant.

## Key findings

- Diamond growth was successful on boron nitride ceramics.
- Boron doping resulted in superconductivity at 3.4K.
- Seeded growth improved film quality.

## Abstract

In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave chemical vapour deposition system. A clear difference was found between the samples which were seeded with nanodiamond and the ones not seeded before growth. Raman spectroscopy confirmed the excellent quality of the diamond film. Dielectric measurements showed an increase in the dielectric constant of the material after diamond growth. The diamond was also doped with boron to make it superconducting. The film had a transition temperature close to 3.4K. Similar strategies can be applied for growth of diamond on other types of ceramics.