Spin-Layer- and Spin-Valley-Locking in CVD-Grown AA'- and AB-Stacked Tungsten-Disulfide Bilayers
Lorenz Maximilian Schneider, Jan Kuhnert, Simon Schmitt, Wolfram, Heimbrodt, Ulrich Huttner, Lars Meckbach, Tineke Stroucken, Stephan W. Koch,, Shichen Fu, Xiaotian Wang, Kyungnam Kang, Eui-Hyeok Yang, and Arash, Rahimi-Iman

TL;DR
This study investigates the valleytronic and optical properties of CVD-grown WS2 bilayers with different stacking configurations, revealing how stacking influences spin-valley locking and optical dichroism, with implications for 2D material optoelectronics.
Contribution
It provides the first detailed analysis of how stacking order in WS2 bilayers affects their spin-valley locking and optical dichroism, combining experimental and theoretical insights.
Findings
AB stacking exhibits pronounced circular and linear dichroism.
Spin-valley locking persists in AB stacking, while AA' shows spin-layer-locking.
Experimental excitonic shifts agree with theoretical predictions.
Abstract
Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in recent years. In contrast, valleytronic properties of TMDC bilayers have not been in the focus so much by now. Here, we report on the valleytronic properties and optical characterization of bilayers of WS2 as a representative TMDC material. In particular, we study the influence of the relative layer alignment in TMDC homo-bilayer samples on their polarization-dependent optical properties. Therefore, CVD-grown WS2 bilayer samples have been prepared that favor either the inversion symmetric AA' stacking or AB stacking without inversion symmetry during synthesis. Subsequently, a detailed analysis of reflection contrast and photoluminescence…
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