# Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells

## TL;DR

This study investigates how resistance-area product influences spin transfer torque switching in perpendicular MRAM cells, revealing that self-heating and voltage-controlled magnetic anisotropy also play key roles, and thermal optimization can reduce switching currents.

## Contribution

It demonstrates the combined effects of spin transfer torque, self-heating, and voltage-controlled magnetic anisotropy on switching behavior, providing new insights for optimizing MRAM performance.

## Key findings

- Self-heating affects switching current density.
- Voltage-controlled magnetic anisotropy influences switching.
- Thermal optimization reduces switching currents.

## Abstract

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density and STT efficiency. Our findings suggest that thermal optimization of perpendicular MRAM cells can result in significant reduction of switching currents.