Radio-Frequency Polymer Field-Effect Transistors Characterized by S-Parameters

TL;DR

This paper reports the first characterization of solution-processed polymer FETs at high frequencies using S-Parameters, achieving a maximum transition frequency of 19 MHz, advancing the understanding of polymer device performance in RF applications.

Contribution

It introduces a novel measurement methodology for polymer FETs using S-Parameters and demonstrates high-frequency operation of solution-processed devices.

Findings

Achieved a maximum transition frequency of 19 MHz.

First S-Parameter characterization of solution-processed organic FETs.

Demonstrated large-area compatible direct-writing technique for device fabrication.

Abstract

Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to slow electronic devices, has to be addressed with suitable device design and measurements methodologies. In this work, we report n-type FETs based on a solution-processed polymer semiconductor where the critical features have been realized by a large-area compatible direct-writing technique, allowing to obtain a maximum frequency of transition of 19 MHz, as measured by means of Scattering Parameters (S-Parameters). This is the first report of solution-processed organic FETs characterized with S-Parameters.