Topological phase transition in quantum spin Hall insulator in the presence of charge lattice coupling
L. M. Cangemi, A. S. Mishchenko, N. Nagaosa, V. Cataudella, G. De, Filippis

TL;DR
This study explores how local electron-phonon interactions can induce a topological phase transition in a quantum spin Hall insulator modeled by the Kane-Mele Hamiltonian, revealing a phonon-mediated gap closing and reopening.
Contribution
It demonstrates that charge-lattice coupling can drive a topological-trivial phase transition in a quantum spin Hall insulator via a gap closing at the M point, using cluster perturbation theory.
Findings
Charge-lattice coupling induces a topological-trivial phase transition.
Phonon Green's function shows a softening peak at the transition.
Quasiparticle dispersion exhibits kinks due to electron-phonon interaction.
Abstract
By using the cluster perturbation theory, we investigate the effects of the local electron-phonon interaction in the quantum spin Hall topological insulator described by the half-filled Kane-Mele model on an honeycomb lattice. Starting from the topological non trivial phase, where the minimal gap is located at the two inequivalent Dirac points of the Graphene, and , we show that the coupling with quantum phonons induces a topological-trivial quantum phase transition through a gap closing and reopening in the point of the Brillouin zone. The average number of fermions in this point turns out to be a direct indicator of the quantum transition pointing out a strong hybridization between the two bare quasiparticle bands of the Kane-Mele model. By increasing the strength of charge-lattice coupling, the phonon Green's propagator displays a two peak structure:…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Advanced Memory and Neural Computing
