# Terahertz Raman spectroscopy probe of intermolecular vibration in high-mobility organic semiconductors under uniaxial strain

## TL;DR

This study uses Terahertz Raman spectroscopy and simulations to explore how uniaxial strain affects intermolecular vibrations and electron-phonon interactions in high-mobility organic semiconductors, revealing strain-induced tuning of charge conduction.

## Contribution

It demonstrates the use of Terahertz Raman spectroscopy combined with simulations to understand strain effects on phonons and charge transport in organic semiconductors.

## Key findings

- Strain shifts Raman peak positions indicating modulation of intermolecular vibrations.
- External uniaxial strain can tune electron-phonon coupling.
- Large strain effects significantly influence charge conduction.

## Abstract

Terahertz Raman spectroscopy was performed on high-mobility organic single-crystal semiconductors, by which the phonon energy at the Gamma point was qualified as a function of external uniaxial strain. The observation of peak shifts in Raman modes under uniaxial strain revealed that application of an external strain can effectively tune the intermolecular vibration that particularly correlates electron-phonon coupling. Terahertz Raman spectroscopy conducted in conjunction with molecular dynamics simulation provides an in-depth understanding of the recently discovered very large strain effect on charge conduction in high-mobility organic semiconductors.