# Current-induced atomic forces in gated graphene nanoconstrictions

## TL;DR

This study uses ab-initio density functional theory to analyze how electronic currents induce atomic forces in gated graphene nanoconstrictions, revealing complex relationships between forces, charges, and voltage profiles.

## Contribution

It provides a detailed ab-initio analysis of current-induced atomic forces in graphene nanostructures, linking forces to charge distribution and voltage drop effects.

## Key findings

- Current-induced bond-forces are correlated with bond-charges.
- Bond-forces are not simply correlated with bond-currents.
- Voltage drop across the junction influences the magnitude of atomic forces.

## Abstract

Electronic current densities can reach extreme values in highly conducting nanostructures where constrictions limit current. For bias voltages on the 1 volt scale, the highly non-equilibrium situation can influence the electronic density between atoms, leading to significant inter-atomic forces. An easy interpretation of the non-equilibrium forces is currently not available. In this work, we present an ab-initio study based on density functional theory of bias-induced atomic forces in gated graphene nanoconstrictions consisting of junctions between graphene electrodes and graphene nano-ribbons in the presence of current. We find that current-induced bond-forces and bond-charges are correlated, while bond-forces are not simply correlated to bond-currents. We discuss, in particular, how the forces are related to induced charges and the electrostatic potential profile (voltage drop) across the junctions. For long current-carrying junctions we may separate the junction into a part with a voltage drop, and a part without voltage drop. The latter situation can be compared to a nano-ribbon in the presence of current using an ideal ballistic velocity-dependent occupation function. This shows how the combination of voltage drop and current give rise to the strongest current-induced forces in nanostructures.