Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
Chang Liu, Yongchao Wang, Hao Li, Yang Wu, Yaoxin Li, Jiaheng Li, Ke, He, Yong Xu, Jinsong Zhang, Yayu Wang

TL;DR
This study demonstrates the realization of robust axion insulator and Chern insulator phases in a 2D antiferromagnetic topological insulator, MnBi2Te4, through quantum transport experiments, highlighting potential for topological magnetoelectric effects.
Contribution
It provides experimental evidence of axion and Chern insulator phases in MnBi2Te4, a stoichiometric 2D magnetic topological insulator, under various magnetic fields and temperatures.
Findings
Observation of axion insulator state with zero Hall plateau
Magnetic field induces transition to a Chern insulator with quantized Hall resistance
Axion insulator state is stable over wide temperature and magnetic field ranges
Abstract
The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect, which was realized in magnetically doped topological insulators (TIs) in the absence of magnetic field. Recently, the layered van der Waals compound MnBi2Te4 has been theoretically predicted and experimentally verified to be a TI with interlayer antiferromagnetic (AFM) order. It is a rare stoichiometric material with coexisting topology and magnetism, thus represents a perfect building block for complex topological-magnetic structures. Here we investigate the quantum transport behaviors of both bulk crystal and exfoliated MnBi2Te4 flakes in a field effect transistor geometry. In the 6 septuple layers (SLs) device tuned into the insulating regime, we…
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