# Flopping-mode electric dipole spin resonance

## TL;DR

This paper introduces 'flopping-mode' electric dipole spin resonance in Si/SiGe quantum dots, significantly improving spin control efficiency with low power electric fields by leveraging charge delocalization and magnetic field gradients.

## Contribution

The study demonstrates a novel 'flopping-mode' resonance technique that enhances electric dipole spin control efficiency in quantum dots, enabling low power operation.

## Key findings

- Achieved nearly three orders of magnitude increase in driving efficiency.
- Demonstrated low power electric dipole spin resonance at zero detuning.
- Enabled dispersive measurements of single electron spin states.

## Abstract

Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays.