# Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors

## TL;DR

This study uses ab initio calculations to explore molybdenum oxide contacts on MoS2, revealing minimal structural modification and effective hole doping, leading to low-resistance, transparent homojunction contacts.

## Contribution

It demonstrates that molybdenum oxides can serve as effective ohmic contacts to MoS2 with minimal electronic structure disruption.

## Key findings

- Molybdenum oxide modifies MoS2 electronic structure very little.
- Charge transfer induces sufficient hole doping for low-resistance contacts.
- Contacts are highly transparent due to minimal structural impact.

## Abstract

In search of an improved strategy to form low resistance contacts to MoS2 and related semiconducting transition metal dichalcogenides, we use ab initio density functional electronic structure calculations in order to determine the equilibrium geometry and electronic structure of MoO3/MoS2 and MoO2/MoS2 bilayers. Our results indicate that, besides a rigid band shift associated with charge transfer, the presence of molybdenum oxide modifies the electronic structure of MoS2 very little. We find that the charge transfer in the bilayer provides a sufficient degree of hole doping to MoS2, resulting in a highly transparent contact region.