# Prediction of Coupled Electronic and Phononic Ferroelectricity in   Strained 2D h-NbN: First-principles Theoretical Analysis

**Authors:** Anuja Chanana, Umesh V. Waghmare

arXiv: 1904.13068 · 2019-07-24

## TL;DR

This paper predicts coexisting ferroelectric and semi-metallic states in strained 2D h-NbN using first-principles calculations, revealing hysteretic polarization switching and Dirac semi-metallic states, with implications for novel electronic devices.

## Contribution

It introduces a first-principles analysis of coupled electronic and phononic ferroelectricity in 2D h-NbN, demonstrating strain-induced multi-state polarization switching and Dirac states, a novel insight in 2D ferroelectrics.

## Key findings

- Hysteretic polarization response at 4.85% strain
- Three-state polarization switching including Dirac semi-metallic states
- Electronic ferroelectricity driven by high polarizability and electron-phonon coupling

## Abstract

Using first-principles density functional theoretical analysis, we predict coexisting ferroelectric and semi-metallic states in two-dimensional monolayer of h-NbN subjected to electric field and in-plane strain ($\epsilon$). At strains close to $\epsilon$=4.85%, where its out-of-plane spontaneous polarization changes sign without inverting the structure, we demonstrate a hysteretic response of its structure and polarization to electric field, and uncover a three-state (P=$\pm$P$_o$Po, 0) switching during which h-NbN passes through Dirac semi-metallic states. With first-principles evidence for a combination of electronic and phononic ferroelectricity, we present a simple model that captures the energetics of coupled electronic and structural polarization, and show that electronic ferroelectricity arises in a material which is highly polarizable (small bandgap) and exhibits a large electron-phonon coupling leading to anomalous dynamical charges. These insights will guide search for electronic ferroelectrics, and our results on 2D h-NbN will stimulate development of piezo-field effect transistors and devices based on the multi-level logic.

## Full text

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## Figures

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## References

26 references — full list in the complete paper: https://tomesphere.com/paper/1904.13068/full.md

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Source: https://tomesphere.com/paper/1904.13068