Orbital hybridization induced band offset phenomena in NixCd1-xO thin films
Arkaprava Das, Deobrat Singh, Chetan Prakash Saini, Rajeev Ahuja,, Anumeet Kaur

TL;DR
This study investigates how Ni doping in NixCd1-xO thin films influences band offset phenomena through orbital hybridization modification, revealing changes in lattice structure, electronic properties, and band gap renormalization.
Contribution
It provides a comprehensive analysis of cationic impurity effects on band offsets and orbital hybridization in NixCd1-xO thin films, combining experimental and simulation approaches.
Findings
Ni doping causes a monotonic shift in diffraction peaks.
Orbital hybridization decreases with increasing Ni concentration.
Band gap renormalization and reduced effective mass are observed.
Abstract
We present the cationic impurity assisted band offset phenomena in NixCd1-xO (x= 0, 0.02, 0.05, 0.1, 0.2, 0.4, 0.8, 1) thin films and further discussed in the light of orbital hybridization modification. Compositional and structural studies revealed that cationic substitution of Cd2+ by Ni2+ ions leads to a monotonic shift in (220) diffraction peak, indicating the suppression of lattice distortion while evolution of local strain with increasing Ni concentration mainly associated to the mismatch in electro-negativity of Cd2+ and Ni2+ ion. In fact, Fermi level pinning towards conduction band minima takes place with increasing Ni concentration at the cost of electronically compensated oxygen vacancies, resulting modification in the distribution of carrier concentration which eventually affects the band edge effective mass of conduction band electrons and further endorses band gap…
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Taxonomy
TopicsZnO doping and properties · Copper-based nanomaterials and applications · Gas Sensing Nanomaterials and Sensors
