Semiconductor to metal transition for Ni doped CdO thin films

TL;DR

This study investigates how Ni doping induces a transition from semiconductor to metal in CdO thin films, revealing the underlying mechanisms involving grain boundaries, impurities, phonon scattering, and carrier activation.

Contribution

It demonstrates the occurrence of a semiconductor to metal transition in Ni-doped CdO thin films and elucidates the combined effects responsible for this transition.

Findings

Pure CdO exhibits negative TCR across all temperatures.

Ni doping induces a semiconductor to metal transition.

Multiple mechanisms contribute to the SMT in NDO films.

Abstract

In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers. The semiconductor to metal transition (SMT) for NDO thin films has been elucidated via combined effect of involved grain boundaries, ionic impurities, phonon scattering and carrier activation.