# Non-Markovian features in semiconductor quantum optics: Quantifying the role of phonons in experiment and theory

## TL;DR

This paper investigates how phonons induce non-Markovian effects in semiconductor quantum optics, analyzing experimental lineshapes, coherence, and memory effects through various theoretical models to better understand electron-phonon interactions.

## Contribution

It introduces and compares multiple theoretical models to accurately describe non-Markovian phonon effects in quantum dot optics across different regimes.

## Key findings

- Phonon interactions cause significant non-Markovian features in quantum dot spectra.
- Phenomenological models often overestimate phonon-induced dephasing.
- Examples include phonon-dressed anticrossings and stabilization of quantum phenomena.

## Abstract

We discuss phonon-induced non-Markovian and Markovian features in QD-based optics. We cover lineshapes in linear absorption experiments, phonon-induced incoherence in the Heitler regime, and memory correlations in two-photon coherences. To quantitatively and qualitatively understand the underlying physics, we present several theoretical models which model the non-Markovian properties of the electron-phonon interaction accurately in different regimes. Examples are the Heisenberg equation of motion approach, the polaron master equation, and Liouville-propagator techniques in the independent boson limit and beyond via the path-integral method. Phenomenological modeling overestimates typically the dephasing due to the finite memory kernel of phonons and we give instructive examples of phonon-mediated coherence such as phonon-dressed anticrossings in Mollow physics, robust quantum state preparation, cavity-feeding and the stabilization of the collapse and revival phenomenon in the strong coupling limit.