Proposed high-power beta cells from MgAlB14-type icosahedral-boron semiconductors
David Emin

TL;DR
This paper proposes using MgAlB14-type icosahedral boron-rich semiconductors to create high-power beta cells capable of generating significantly more electricity from nuclear decays due to their self-healing properties and improved charge carrier dynamics.
Contribution
It introduces a novel approach to enhance beta cell power output by utilizing boron-rich semiconductors with self-healing and favorable electron-phonon interactions.
Findings
Potential for orders-of-magnitude higher power output.
Self-healing property reduces radiation damage.
Enhanced efficiency through polaron dynamics.
Abstract
Beta cells generate electric power as carrier-producing beta irradiation from incorporated radioisotopes bombard a series of p-n-junctions. However, radiation damage to the semiconductors commonly used in solar cells limits beta cells to extremely weak irradiations that generate concomitantly miniscule electric powers, e.g. micro-Watts. By contrast, beta cells that generate many orders-of-magnitude larger powers are possible with icosahedral boron-rich semiconductors since their bombardment-induced atomic displacements spontaneously self-heal. Furthermore, substitutions for Mg and Al atoms of icosahedral-boron-rich semiconductors based on the MgAlB14 structure can produce p-n junctions as electron transfers from doping-induced interstitial extra-icosahedral atoms convert some normally p-type materials to n-type. Moreover, electron-phonon interactions of the resulting readily…
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