Ultra-low-power orbital-controlled magnetization switching using a ferromagnetic oxide interface

TL;DR

This paper introduces a novel orbital-controlled magnetization switching method using ferromagnetic oxide interfaces, enabling deterministic, magnetic-field-free switching with ultra-low electric fields and minimal current, advancing energy-efficient spintronics.

Contribution

It demonstrates a new scheme of orbital-controlled magnetization switching that achieves deterministic switching solely by electric fields, without magnetic fields or large currents.

Findings

Achieved 90-degree magnetization switching with 0.05 V/nm electric field.

Demonstrated switching with negligible current density of 10^-2 A/cm^2.

Showed potential of band engineering for efficient magnetization control.

Abstract

A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the magnetic anisotropy (MA) of the ferromagnet by an electric field. However, the voltage-induced MA is too weak to deterministically switch the magnetization without an assisting magnetic field, and the strategy towards this goal remains elusive. Here, we demonstrate a new scheme of orbital-controlled magnetization switching (OCMS): A sharp change in the MA is induced when the Fermi level is moved between energy bands with different orbital symmetries. Using a ferromagnetic oxide interface, we show that OCMS can be used to achieve a deterministic and magnetic-field-free 90 degree-magnetization switching solely by applying an extremely small electric field of 0.05 V/nm with a negligibly small current density of 10^-2 A/cm^2. Our results highlight the huge potential of band engineering in ferromagnetic materials for efficient magnetization control.