# Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure

## TL;DR

This paper reports a nanoscale tunnel field effect transistor using a LaAlO3/SrTiO3 heterostructure, demonstrating controllable tunneling current with steep sub-threshold slope and temperature-dependent behavior, supported by a transport model.

## Contribution

It introduces a novel lateral heterostructure TFET based on complex oxides, with experimental demonstration and a consistent tunneling transport model.

## Key findings

- Steep sub-threshold slope up to 10 mV/decade
- High transconductance of approximately 22 μA/V
- Temperature-dependent tunneling behavior

## Abstract

We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{\mu A/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope.