Recent Progress and Future Prospects of 2D-based Photodetectors

TL;DR

This paper reviews recent advances in 2D material-based photodetectors, highlighting their advantages over traditional semiconductors and discussing future prospects for high-performance, broadband, and flexible photodetection technologies.

Contribution

It provides a comprehensive overview of 2D material-based photodetectors, emphasizing their unique properties, recent developments, and integration potential with existing photonic platforms.

Findings

2D materials enable broadband, ultrafast photodetection.

Hybrid systems improve sensitivity and spectral range.

Integration with silicon photonics enhances practical applications.

Abstract

Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and CMOS-incompatibility. New emerging 2D materials such as graphene, TMDs and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from visible to far infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light detection capabilities. Notably the facile integration of 2D-photodetectors on silicon photonics or CMOS platforms paves the way towards high performance, low-cost, broadband sensing and imaging modalities.