# Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal

## TL;DR

This study investigates the highly anisotropic interlayer magnetoresistance in ZrSiS, revealing unique angle-dependent behaviors and explaining them through combined experimental measurements and theoretical modeling.

## Contribution

It provides a comprehensive analysis of the anisotropic magnetoresistance in ZrSiS, combining experiments with first-principles calculations to explain unusual AMR features.

## Key findings

- Distinct out-of-plane AMR with cusp-like features
- Strong four-fold in-plane anisotropy of AMR
- Estimated relaxation time of 2.6×10^{-14} s and mean free path of 15 nm

## Abstract

We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR that is not well understood. Our measurements of the polar out-of-plane AMR show a surprisingly different response with a pronounced cusp-like feature. The maximum of the cusp-like anisotropy is reached when the magnetic field is oriented in the $a$-$b$ plane. Moreover, the AMR for the azimuthal out-of-plane current direction exhibits a very strong four-fold $a$-$b$ plane anisotropy. Combining the Fermi surfaces calculated from first principles with the Boltzmann's semiclassical transport theory we reproduce and explain all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR. We are also able to clarify the origin of the strong non-saturating transverse magnetoresistance as an effect of imperfect charge-carrier compensation and open orbits. Finally, by combining our theoretical model and experimental data we estimate the average relaxation time of $2.6\times10^{-14}$~s and the mean free path of $15$~nm at 1.8~K in our samples of ZrSiS.