# Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction

## TL;DR

This paper presents a theoretical study of a 2D van der Waals magnetic tunnel junction using VSe2 and MoS2, demonstrating high tunneling magnetoresistance and potential for efficient spintronic devices.

## Contribution

It introduces a novel VSe2/MoS2 heterojunction MTJ with room-temperature ferromagnetism and spin-orbit torque capabilities, advancing 2D spintronics technology.

## Key findings

- Achieves 846% TMR at 300K
- Proposes SOT-based magnetization switching
- Voltage-controlled transport properties

## Abstract

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet with the room-temperature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The non-equilibrium study reveals a large tunneling magnetoresistance (TMR) of 846 % at 300 Kelvin, identifying significantly its parallel and anti-parallel states. Thanks to the strong spin Hall conductivity of MoS2, SOT is promising for the magnetization switching of VSe2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe2/MoS2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.