# Visualizing electrostatic gating effects in two-dimensional heterostructures

## TL;DR

This paper demonstrates how micro-ARPES can directly visualize and measure electronic band structure changes in 2D heterostructures under electrostatic gating, revealing shifts in chemical potential, band edges, and band-gap renormalization.

## Contribution

It introduces the application of micro-ARPES to study electrostatic gating effects in 2D heterostructures, enabling direct observation of electronic structure modifications.

## Key findings

- Chemical potential shifts by 0.6 eV in graphene under gating
- Conduction band edge observed in 2D semiconductors with electron accumulation
- Significant band-gap renormalization at low electron densities

## Abstract

The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties.

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Source: https://tomesphere.com/paper/1904.07301