Quantitative Electromechanical Atomic Force Microscopy

TL;DR

This paper introduces a new method for detecting false ferroelectric signals in nanoscale electromechanical measurements and demonstrates quantitative nanoelectromechanical characterization using interferometry, enhancing the reliability of VM-AFM techniques.

Contribution

It presents a simple approach to identify false hysteresis in VM-AFM and showcases a quantitative interferometric method for nanoelectromechanical measurements.

Findings

Developed a method to detect false ferroelectric hysteresis.

Achieved fully quantitative and repeatable nanoelectromechanical measurements.

Enhanced reliability of nanoscale electromechanical characterization.

Abstract

The ability to probe a materials electromechanical functionality on the nanoscale is critical to applications from energy storage and computing to biology and medicine. Voltage modulated atomic force microscopy (VM-AFM) has become a mainstay characterization tool for investigating these materials due to its unprecedented ability to locally probe electromechanically responsive materials with spatial resolution from microns to nanometers. However, with the wide popularity of VM-AFM techniques such as piezoresponse force microscopy (PFM) and electrochemical strain microscopy (ESM) there has been a rise in reports of nanoscale electromechanical functionality, including hysteresis, in materials that should be incapable of exhibiting piezo- or ferroelectricity. Explanations for the origins of unexpected nanoscale phenomena have included new material properties, surface-mediated polarization changes and/or spatially resolved behavior that is not present in bulk measurements. At the same time, it is well known that VM-AFM measurements are susceptible to numerous forms of crosstalk and, despite efforts within the AFM community, a global approach for eliminating this has remained elusive. In this work, we develop a method for easily demonstrating the presence of hysteretic (ie, false ferroelectric) long-range interactions between the sample and cantilever body. This method should be easy to implement in any VM-AFM measurement. We then go on to demonstrate fully quantitative and repeatable nanoelectromechanical characterization using an interferometer. These quantitative measurements are critical for a wide range of devices including mems actuators and sensors, memristor, energy storage and memory.