# Tuning the metal-insulator transition in epitaxial SrVO3 films by   uniaxial strain

**Authors:** Changan Wang, Hongbin Zhang, Kumar Deepak,5Chao Chen, Arnaud Fouchet,, Juanmei Duan, Donovan Hilliard, Ulrich Kentsch, Deyang Chen, Min Zeng,, Xingsen Gao, Yu-Jia Zeng, Manfred Helm, Wilfrid Prellier, and Shengqiang Zhou

arXiv: 1904.06629 · 2019-11-20

## TL;DR

This study demonstrates how uniaxial strain via helium ion irradiation can effectively tune the metal-insulator transition in epitaxial SrVO3 films, highlighting the role of electron-electron interactions over disorder effects.

## Contribution

It introduces a novel method to control the MIT in SrVO3 films by expanding the out-of-plane lattice constant without altering in-plane parameters, supported by experimental and theoretical analysis.

## Key findings

- MIT observed with increased ion fluence
- Transition driven mainly by electron-electron interactions
- Theoretical calculations confirm bandwidth reduction

## Abstract

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.

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Source: https://tomesphere.com/paper/1904.06629