# Single plasmon generation in an InAs/GaAs quantum dot in a   transfer-printed plasmonic microring resonator

**Authors:** Akihito Tamada, Yasutomo Ota, Kazuhiro Kuruma, Katsuyuki Watanabe,, Satoshi Iwamoto, Yasuhiko Arakawa

arXiv: 1904.06153 · 2019-04-16

## TL;DR

This paper demonstrates the generation of single plasmons using an InAs/GaAs quantum dot embedded in a transfer-printed plasmonic microring resonator on a silver surface, advancing quantum plasmonic device development.

## Contribution

It introduces a novel fabrication method for integrating quantum dots with plasmonic resonators and demonstrates efficient single plasmon generation via Purcell enhancement and anti-bunching.

## Key findings

- Purcell-enhanced radiation observed from quantum dots
- Strong anti-bunching indicates single plasmon generation
- Successful transfer printing enables complex heterostructure assembly

## Abstract

We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically-smooth silver surface. We fabricated this structure with the help of transfer printing, which enables the pick-and-place assembly of the complicated, heterogeneous three dimensional stack. We show that a high-order surface-plasmon-polariton transverse mode mediates efficient coupling between the InAs/GaAs quantum dots and the plasmonic cavity, paving the way for developing plasmonic quantum light sources based on the state-of-the-art solid-state quantum emitters. Experimentally, we observed Purcell-enhanced radiation from the quantum dot coupled to the plasmonic mode. We also observed a strong anti-bunching in the intensity correlation histogram measured for scattered photons from the plasmonic resonator, indicating single plasmon generation in the resonator. Our results will be important in the development of quantum plasmonic circuits integrating high-performance single plasmon generators.

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Source: https://tomesphere.com/paper/1904.06153