# Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications

## TL;DR

This paper introduces a comprehensive large-signal model for metal-insulator-graphene diodes, capturing their dynamic response for RF applications, including effects like image force, and validated against experimental data.

## Contribution

A novel circuit-compatible large-signal model for MIG diodes that incorporates image force effects and is validated with experimental measurements.

## Key findings

- Model accurately predicts diode behavior in RF circuits.
- Inclusion of image force effect improves barrier height estimation.
- Model implemented successfully in Verilog-A for circuit simulation.

## Abstract

We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog A to be used in existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.

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Source: https://tomesphere.com/paper/1904.05792