# Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP

## TL;DR

This study explores how applying pressure affects electrical transport and Fermi-surface topology in the Weyl semimetal TaP, revealing stable carrier densities but significant changes in magnetoresistance linked to mobility variations.

## Contribution

It provides new insights into pressure effects on Fermi-surface topology and magnetoresistance in TaP, highlighting mobility changes without significant carrier density variation.

## Key findings

- Weak decrease in charge-carrier densities up to 1.2 GPa
- Stable Fermi-surface topology under pressure
- Pressure-induced increase in transverse magnetoresistance for B||a

## Abstract

We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron- and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a-direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B||a and B||c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B||a contrary to the results for B||c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c-direction.