MOSFET GIDL Current Variation with Impurity Doping Concentration A Novel Theoretical Approach

TL;DR

This paper presents a novel theoretical approach to understanding how impurity doping concentration affects GIDL current in MOSFETs, using a complete qualitative and quantitative analysis with a new geometrical perspective.

Contribution

It introduces a new theoretical model linking impurity doping to GIDL current variation, validated by matching results with established simulation data.

Findings

Band-to-band tunneling described by De Casteljaus algorithm matches experimental data.

Leakage current dependency on impurity density explained through geometrical approach.

Proportionality constant behaves like impurity gradient, aligning with 2D simulation results.

Abstract

This paper depicts the actual variation of gate induced drain leakage current with impurity doping concentration by complete qualitative and quantitative approach. De Casteljaus algorithm is applied to describe the band to band tunneling in a thin gate oxide nMOSFET and the results are remarkably matched. Moreover for the very first time, the dependency of the leakage current over impurity density in the MOSFET drain region is explained in the context of pure geometrical approach. Surprisingly one of the proportionality constant exactly behaves like impurity gradient which results same characteristics as MOSFET Drain impurity doping profile measured using 2D simulator.