Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir

TL;DR

This study investigates the magnetic and electrical transport properties of epitaxial Mn$_{3}$Ir thin films, revealing small uncompensated moments and domain effects that influence transport phenomena like the anomalous Hall effect.

Contribution

It provides new insights into the microstructure and domain behavior of Mn$_{3}$Ir thin films and their impact on transport properties, especially in ultrathin layers.

Findings

Ultrathin 3 nm films exhibit significant in-plane tensile strain.

Small remanent moments arise from uncompensated Mn spins.

Observed transport effects are dominated by small antiferromagnetic domains.

Abstract

Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in exchange bias heterostructures. In this paper, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic $\gamma$-Mn$_{3}$Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (2.24 $\pm$ 0.08) $\times$ 10$^{23}$ cm$^{-3}$. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small remanent moment, observed at low temperatures, shown by XMCD spectroscopy to arise from uncompensated Mn spins. Of the order 0.02 $\mu_{B}$ / atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains, < 20 nm in size, of differing chirality account for the absence of observed Berry curvature driven magnetotransport effects.